Abstract
We investigate the propriety of SCM (scanning capacitance microscopy) for determination of impurity distribution of MOSFETs. Two-dimensional impurity distribution is converted from /spl Delta/C//spl Delta/V signal obtained by SCM. It is revealed that the SCM signal is quite sensitive to the effects of charge depletion around the pn junction, singularity of structure in vicinity of SiO/sub 2//Si interface (edge effect), and the work function of the gate electrode. Making use of process/device simulations to analyze these effects, it is found that the SCM signal near the channel surface region of the Si substrate contains large error due to the edge effects. The lateral extent of the source/drain region obtained by SCM shows reasonable agreement with that determined by measurements and simulations of electrical characteristics of the MOSFET.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
