Abstract
The accuracy with which two-dimensional carrier profiles can be extracted from scanning capacitance microscopy (SCM) images of doped structures in silicon depends on the model used to interpret the SCM differential capacitance data. This work validates models of the SCM by comparing the calculated SCM signal to the measured signal for a variety of sample parameters, measurement conditions, and capacitance sensors from different manufacturers. The magnitude of the capacitance sensor high-frequency voltage is measured and its effect on ΔC–V curves and extracted carrier profiles is quantified. Two nonidealities commonly observed in SCM signals, U-shaped C–V curves and double zero crossing in the SCM signal at the p–n junctions, are related to the measurement parameters and explained.
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