Statistical aging analysis with process variation consideration

Abstract

As CMOS devices become smaller, process and aging variations become a major issue for circuit reliability and yield. In this paper, we analyze the effects of process variations on aging effects such as hot carrier injection (HCI) and negative bias temperature instability (NBTI). Using Monte-Carlo based transistor-level simulations including principal component analysis (PCA), the correlations between process variations and aging variations are considered. The accuracy of analysis is improved (2-7%) compared to other methods in which the correlations are ignored, especially in smaller technologies.