Abstract
We investigate and disentangle the static interfacial proximity and dynamic spin transport-induced interfacial anomalous Hall effect in W/Y3Fe5O12 (YIG) heterostructures. Quantitative studies via the anomalous Hall effect and spin Hall magnetoresistance reveal that the contributions from both the static interfacial proximity and the dynamic spin transport increase with decreasing temperature (T) but with opposite signs. The contribution from dynamic spin transport is negative and more prominent than that from the static interfacial proximity effect, especially at high T, resulting in an overall negative anomalous Hall resistivity (ρAHE). By illustrating the indispensable and opposite role of static interfacial proximity and dynamic spin transport in the interfacial anomalous Hall effect in W/YIG heterostructures, our study facilitates the development of low power consumption spintronic devices based on magnetic insulators.
Published Version
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