Abstract
After giving a brief review of the various techniques used for determining the density and energy distribution of states in the mobility gap of amorphous hydrogenated silicon, we present experimental results on measurements of density of states at the Fermi level of samples prepared in our laboratory from silane-hydrogen mixture. The results show that estimates of density of states as obtained from field effect in coplanar structures, temperature and frequency dependence of capacitance of Schottky diodes and space charge limited conduction in n +nn + structures are in general agreement with one another.
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