Abstract
The dc conductivity in vacuum evaporated amorphous thin films of the glassy alloys Se100–xZnx(2 ≤ x ≤ 20) are meas-ured in the temperature range (308 - 388 K). The dc conductivity (σdc) is increases with increased of Zn concentration in the glassy alloys. The activation energy (ΔE) decreases with increase of Zn content. The conduction is explained on the basis of localized state in the mobility gap. To study the effect of electric field, a Current-Voltage characteristic has been measured at various fixed temperatures. The Current-Voltage data are fitted into the theory of space charge limited conduction in case of uniform distribution of traps in mobility gap at high electric fields (E ~104 V/cm) of these materials. The density of localized state (g0) are estimated by fitting in theory of space charge limited conduction (SCLC) at the temperature range of (352 - 372 K) in the glassy Se100–xZnx. The density of localized state (0) near the Fermi level are increases with increase of Zn concentration in the (Se100–xZnx) thin films and explain on the basis of increase of the Zn-Se bond.
Highlights
Chalcogenide glasses belongs to a special group of amorphous semiconductors, which include one, two and more chalcogenide elements S, Se, Te from the VI group of the periodic table
We are focusing on the glass composition of Se-Zn system and the materials are found to be suggestive for their electrically, optically, dielectrically and kinetically parameters by other workers [4,5]. It can be observed at high fields in the glassy alloy because of high resistivity and the amorphous semiconductors are most convenient for high field conduction studies
It is preferred to taking I - V characteristics, annealing of thin films of all glassy near to their glass transition temperature Tg which ranged from 345 - 368 K was carried out for one and half hour in the sample holder.Wayne Kerr LCR meter (4300) was used for measurement of capacitance of the bulk samples at lower frequency (100 Hz) and at room temperature, which is helpful to determine the density of localized states
Summary
Chalcogenide glasses belongs to a special group of amorphous semiconductors, which include one, two and more chalcogenide elements S, Se, Te from the VI group of the periodic table. Confirm additives are used and mostly Se-Te, Se-Ge, Se-Sb, Se-ln and SeZn is the great interest important properties such as greater hardness, higher sensitivity, higher conductivity and smaller aging effects as compared to pure a-Se. Recently, we are focusing on the glass composition of Se-Zn system and the materials are found to be suggestive for their electrically, optically, dielectrically and kinetically parameters by other workers [4,5]. We are focusing on the glass composition of Se-Zn system and the materials are found to be suggestive for their electrically, optically, dielectrically and kinetically parameters by other workers [4,5] It can be observed at high fields in the glassy alloy because of high. The application of high field to free carrier system may affect both the mobility and the number of charge carriers
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