State of the art E-Beam probing

Abstract

Electron beam testing is an effective tool for internal IC diagnosis. Modern IC's are characterised by higher densities and smaller structures down to 0.5 μm. More complex hierarchy requires up to 6 wiring layers. While operated at clock frequencies of several 100 MHz supply voltages and internal signal levels are decreased to reduce power consumption. E-Beam Probe Stations developed at ICT offer the means for design verification and defect analysis of these modern IC's by high frequency sampling operation and by using field emission technology for optimised spatial and voltage resolution. Access to signals on deeper and passivated wiring layers becomes possible by a charge compensation method; if these signals are to be measured with highest accuracy an integrated etching tool can be activated at any time to open windows through the passivation for direct probing on deeper lines. In addition a field correction tool provides a stable probing position even on smallest lines.