Stable singlemode operation of 0.98 µm GaInAs/GaInAsP/GaInP buried ridge stripe laser with AlGaInP current blocking layer

Abstract

By using a AlGaInP current blocking layer lattice-matched to GaAs, a GaInAs/GaInAsP/GaInP strained single quantum well (SSQW) buried ridge stripe laser emitting at 0.98 µm wavelength region was fabricated and successful operation was achieved for the first time. Single-longitudinal-mode operation with single-lobed far-field patterns was obtained at up to an output power of 50 mW for the uncoated laser (4 × 1000 µm2) under continuous-wave (CW) operation at room temperature. In addition, CW operation beyond 50 mW output was obtained at up to 100°C for the same device.