OMVPE growth of AlGaInP/Ga xIn 1− xP strained quantum well structures and their applications to visible laser diodes

Abstract

AlGaInP/Ga 0.43In 0.57P strained single quantum well (SSQW) structures were grown by low pressure (60 Torr) OMVPE at various growth temperature on Si-doped GaAs substrates. A large blue shift of FL spectra and a reduction of spectrum linewidths were observed with increasing growth temperature and the dependence of PL peak energy on the substrate off angle completely disappeared at 780°C. It was found that the degree of sub-lattice ordering in the SSQW structure can be controlled by growth temperature with preserving a high crystalline quality. A separate confinement heterostructure AlGaInP/Ga 0.43In 0.57P strained multiple quantum well laser was grown on (100) Si-doped GaAs at 740°C. Continuous wave operation was observed up to 160°C, the highest operating temperature ever reported in the lasers operating in the visible wavelength. The characteristic temperature was 160 K between 25 and 50°C. The emission wavelength and the threshold current density for a 80×940 μm device at 25°C were 692 nm and 410 A/cm 2, respectively.