High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multiple quantum well laser diodes emitting at 676 nm

Abstract

High temperature, low threshold current, and transverse mode stabilised operation is achieved in a separate confinement heterostructure AlGaInP/Ga0.4In0.6P compressively strained-multiquantum-well structure which was fabricated from an epitaxial wafer grown on misoriented (100) GaAs substrate by low-pressure metalorganic vapour phase epitaxy. Remarkable improvements in threshold current and characteristic temperature (T0) have been demonstrated. The threshold current is 32 mA at room temperature and the emission wavelength is ~ 676 nm. The characteristic temperature between 20 and 70°C is 162 K, which is the highest CW T0 value ever reported for devices operating in the visible wavelength region without incorporating multiquantum barriers.