Abstract
A buried ridge stripe (BRS) structure InGaAsP-Si hybrid laser based on selective area metal bonding (SAMB) method is demonstrated. This novel hybrid laser structure combines the SAMB method's advantage of low bonding requirements and great flexibility and the BRS lasers' low threshold, high thermal performance, and good optical field and carrier confinement. The 300-$\mu $ m-long hybrid laser has a threshold current of 14 mA and a maximum single-facet output power of 5.4 mW at room temperature, with a slope efficiency of 0.17 W/A. The laser has a characteristic temperature of 50 K, with continuous wave operation at temperature >50 °C.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
