Abstract
We describe the fabrication and modulation characteristics of short cavity InP/InGaAsP buried ridge stripe (BRS) lasers with ion beam etched facets. A CW threshold current as low as 9 mA is achieved for 50 µm-long cavity laser. A relaxation oscillation frequency in excess of 17 GHz is observed in such laser for an output optical power of only 9 mW/facet. The small signal -3 dB modulation frequency of such device is 11.5 GHz and is limited by the parasitic impedances of the BRS structure.
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