Abstract
Structural and composition properties of HfO2-based layers fabricated by RF magnetron sputtering were studied by means of X-ray diffraction and transmission electron microscopy, Energy dispersive spectroscopy and ATR-FTIR techniques versus the deposition parameters and post-deposition annealing treatment. It was observed that the temperature at which amorphous-crystalline transformation of pure HfO2 layers occurs depends on deposition conditions. It was found that silicon incorporation in HfO2 matrix plays main role in the stability of the layers and allows to increase the temperature of layer crystallization up to 900-1100{degree sign}C.
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