Abstract
Structural and composition properties of hafnium silicate layers fabricated by RF magnetron sputtering were studied by means of spectroscopic ellipsometry, X-ray diffraction, transmission electron microscopy and attenuated total reflection infrared spectroscopy with respect to the deposition parameters and post-deposition annealing treatment. The variation of the deposition conditions allows the temperature of amorphous-crystalline phase transformation of pure hafnium oxide layers to be controlled. It is shown that the silicon incorporation in oxide matrix prevents the formation of interfacial silicon oxide layer and plays a major role in the stability of the structure of hafnium based layers remaining an amorphous state upon annealing at 900–950 °C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
