Abstract
Structural and chemical properties of Hf-based layers fabricated by RF magnetronsputtering were studied by means of x-ray diffraction, transmission electron microscopy andattenuated total reflection infrared spectroscopy versus the deposition parametersand annealing treatment. The deposition and post-deposition conditions allowus to control the temperature of the amorphous–crystalline phase transition ofHfO2-based layers. It was found that silicon incorporation in anHfO2 matrix plays the main role in the structural stability of the layers. It allows us not only todecrease the thickness of the film/substrate interfacial layer to 1 nm, but also to conservethe amorphous structure of the layers after an annealing treatment up to 900–1000 °C.
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