Abstract
Silicon carbide field emission arrays (FEA) are at the forefront of development as new promising electron sources for vacuum microelectronic devices. The authors present a new process for the fabrication of array of nanoscale tips with reduced heterogeneity of their heights. The characterization results show that at strong electric fields the heterogeneity is a key factor causing current instability. Diamond is recognized as the best material to obtain field emission, but fabrication of tip array with a reasonable aspect ratio is a challenge. Therefore, the authors have combined the benefits of both the abovementioned materials and fabricated silicon carbide FEA of tips coated with nanocrystalline undoped diamond thin film. The coating smoothens the virtual emitting surface connecting the tips, and therefore reduces heterogeneity of their heights, thereby improving the current stability. Current fluctuation decreased to 5% in compare with 23% in FEA without coating.
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