Abstract
A new process for the fabrication of two-tier silicon carbide field emission array (FEA) of nanoscale tips coated with thin nanocrystalline undoped and highly boron-doped diamond films has been developed to improve the electron emission characteristics of the pure silicon carbide tips. The effects of boron-doped film on field emission properties have been studied in comparison with undoped ones, using a diode configuration. The FEA covered with highly boron-doped film demonstrated the lower turn on electric field and higher emission current due to lower work function, 1.5 times lower than for undoped one. Emission current at various values of the electrode gap from 10 to 500 μm has been studied. It was shown that field enhancement factor of two-tier FEA decreases at small interelectode gap (<100 μm) due to perturbations of electric field and mutual screening of microtips, which leads to significant increase in an applied electric field required for maintaining the preset emission current. Both fabricated FEAs demonstrated high current stability with fluctuations not exceeding 5% at relatively low vacuum (10−5–10−6 Torr).
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