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Abstract
This article presents the bias and geometry optimization procedure for the radio frequency (RF) stability performance of nanoscale symmetric double-gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs). The stability model can provide hints for optimizing the DG-MOSFET under an RF range. The device parameters are extracted for different bias and geometry conditions through numerical simulation, and the RF figures of merit such as cut-off frequency (ft) and maximum oscillation frequency (fmax), along with stability factor, are calculated for an optimized structure. The proposed structure exhibits good RF stability performance.
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