Abstract
This paper presents comparative study on radio frequency (RF) stability performance of Double Gate MOSFET (DG-MOSFET) and Double Gate Tunnel FET (DG-TFET). A non-quasi static small signal model is used to extract small signal parameters which are then verified with extracted parameters through simulation. The high frequency performance of DG-MOSFET and DG-TFET is evaluated by extracting RF Figure of Merit (FoM) such as cut-off frequency (f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> ), maximum oscillation frequency (f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> ) along with stability factor. The result shows that DG-TFET has better cut-off frequency and stability performance as compared to DG-MOSFET.
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