Abstract

The bias and geometry optimization procedure for the radio frequency stability performance of nanoscale symmetric double-gate metal oxide semiconductor field-effect transistors (DG-MOSFET) are presented. The developed stability model provides relation between geometrical parameter and small-signal parameters which helps in optimizing the DG-MOSFET under RF range. The device parameters are extracted for different bias and geometry conditions through numerical simulation, and the RF figures of merit such as cut-off frequency (ft) and maximum oscillation frequency (fmax), along with stability factor, are calculated for an optimized structure.

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