Abstract
The stability of poly-Si gated (∼1.2 nm equivalent oxide thickness, EOT) and (∼3.1 nm EOT) n-channel metal oxide semiconductor field effect transistor devices were assessed after constant current stressing of the gate. The changes in threshold voltage and transconductance were measured as a function of stress time and stress current over the range of to C of injected charge per square centimeter. With forming gas annealed positive shifts in the threshold voltage exhibited a power- law dependence. Under high stressing conditions, a power-law dependence of degradation of threshold voltage on the injected charge was observed. Stressing at high current was seen to generate traps. Stressing at low current revealed a saturation of the threshold voltage after modest stressing times. Stressing on deuterium annealed sample showed less and shift (under high injection conditions), which is attributed to the effectiveness of heavier in preventing trap generation under high stressing conditions. With stressed at similar electric fields, the threshold voltage shifted negatively and the transconductance increased. © 2004 The Electrochemical Society. All rights reserved.
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