Abstract
The resistance, resistance versus temperature, thermal stability, electrical stress, and constant voltage reliability stress of Ti/TiN thin film resistors were studied. The results indicate that Ti/TiN thin film resistor has excellent thermal stability up to 350°C. According to the electrical measurements, Ti layer has a lower electrical resistance than the TiN layer. Additionally, the main failure mechanism of Ti/TiN thin film resistors is thermally activated by Joule heating. The thermal activation energies are determined to be 1.3 eV for failure of the Ti layer and 1.8 eV for failure of the TiN layer. Based on these results, Ti/TiN thin film resistors are projected to be electrically stable for ten years of operation if their temperature is kept below 311°C.
Published Version
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