Thermal emission rates and activation energies of electrons at tantalum centers in silicon

Abstract

The thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are 232 and 472 meV for the two donor levels below the conduction band edge and the pre-exponential factors, A, are both 1.5 × 10 10 sec −1 in the Ahrrenius equation for the emission rate, A ( T 300) 2 exp ( > −ΔE k BT ) .