Abstract
GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.
Highlights
S INCE the first demonstration of modulation doping in an AlGaN/GaN heterostructure in 1991 [1] and the first realization of an AlGaN/GaN high electron mobility transistor (HEMT) in 1993 [2], GaN electronics has come a long way
We reviewed trapping issues associated with the gate dielectric of AlGaN/GaN MIS-HEMTs
Intense research has been dedicated toward understanding and addressing the stability and reliability concerns of GaN power transistors for RF and power management applications
Summary
S INCE the first demonstration of modulation doping in an AlGaN/GaN heterostructure in 1991 [1] and the first realization of an AlGaN/GaN high electron mobility transistor (HEMT) in 1993 [2], GaN electronics has come a long way. Many reviews have been dedicated to exult the properties of the GaN semiconductor system and its revolutionary impact in RF power and power management applications [6]–[10] Commercial deployment of these technologies is well on their way with about a ten-year advantage for RF power markets [9], [11]. This article represents an attempt to summarize current understanding of some of the most relevant and interesting stability and reliability concerns of power GaN FETs. The literature is vast, and space is limited. This article tries to separate stability from reliability issues They often come intricately wrapped together, but their impact on device operation and mitigation measures are very different. Stability refers to recoverable changes in the device electrical characteristics as a result of sustained operation These are due to trapping and floating body effects. DEL ALAMO AND LEE: STABILITY AND RELIABILITY OF LATERAL GaN POWER FIELD-EFFECT TRANSISTORS. This emerging technology currently represents the best prospect for the realization of high-performance enhancement-mode (VT > 0) devices for power management applications
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