GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Ruize Sun,Bo Zhang,Jingxue Lai,Wanjun Chen

doi:10.1109/access.2020.2967027

Abstract

High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

Highlights

In the view of minimizing power consumption and heat dissipation during signal or energy conversions, high frequency and high efficiency are most attractive among the premier interests on the power IC designers’ checklist [1], [2]
The GaN High Electron Mobility Transistors (HEMTs) exhibit a 2-Dimentional Electron Gas (2DEG) channel and well fit the lateral integration [9], [10], which is a promising road to fully exploit the merits of GaN material
In order to have a comprehensive review of the evolution of GaN Monolithic Microwave Integrated Circuit (MMIC) process, the reported MMICs are reviewed in terms of critical gate length which represents the core technology parameter, fabrication institute, operation frequency and power added efficiency (PAE) of power amplifiers (PAs), and other key performance

Summary

INTRODUCTION

In the view of minimizing power consumption and heat dissipation during signal or energy conversions, high frequency and high efficiency are most attractive among the premier interests on the power IC designers’ checklist [1], [2]. These lateral distance values, which are all larger than that of GaN HEMTs for MMIC application, can contribute to higher breakdown voltage for GaN power HEMTs. Despite the difference in in dimensions, the same heterostructure and electrode layout establish the common structure basis of lateral power integration schemes. Adding FPs could improve BV, it brings additional parasitic capacitance which limits the operation frequency of GaN HMETs. Especially for the co-integration of GaN HEMTs for MMIC and power switching, it is essential to realize high BV without increasing parasitic capacitance. In order to have a comprehensive review of the evolution of GaN MMIC process, the reported MMICs are reviewed in terms of critical gate length which represents the core technology parameter, fabrication institute, operation frequency and PAE of PAs, and other key performance

GATE LENGTH

GAN POWER INTEGRATION FOR SMART POWER CONVERSION ICS

Findings

CONCLUSION