Abstract
A systematic study on thin film preparation by means of reactive magnetron sputtering was carried out for an antiperovskite manganese compound Mn3CuN, a recently discovered ferromagnetic shape-memory alloy. We obtained a (1 1 1) oriented thin film that possesses a ferromagnetic transition temperature similar to stoichiometric bulk samples on an yttria-stabilized zirconia (YSZ) substrate. On the other hand, (1 0 0) oriented thin films were obtained on MgO substrates while the thin films were deficient in nitrogen. The correlation between the sputtering parameters and nitrogen deficiency was thoroughly investigated in order to reduce the nitrogen deficiency. The magnetization measurements of a Mn3CuN0.86 thin film revealed a magnetic anisotropy that is consistent with the behavior of magnetostriction of this material.
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