Abstract
Spray pyrolysis method is used to deposit lanthanum telluride (La 2Te 3) thin films on glass substrates. The films are deposited by pyrolysis of sprayed solutions of LaCl 3 and Te metal dissolved in concentrated HCl and HNO 3 along with hydrazine hydrate as a reducing agent. X-ray diffraction analyses show that the films are polycrystalline with La 2Te 3 phase. The films have a direct optical band gap of 2.2 eV. The films are p-type semiconductors with an electrical resistivity of the order of 10 4 Ω cm at ambient temperature (27 °C).
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