Abstract
Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide bandgap semiconductor material whose film is deposited on glass substrate using aqueous solution of SnCl4·5H2O as a precursor. XRD (X-ray diffraction), UV (ultraviolet visible spectroscopy), FESEM (field emission scanning electron microscopy), and EDS (energy dispersive spectroscopy) analysis are done for structural, optical, surface morphological, and compositional analysis. XRD analysis shows polycrystalline nature of samples with pure phase formation. Crystallite size calculated from diffraction peaks is 29.92 nm showing nanostructured thin films. FESEM analysis shows that SnO2 thin film contains voids with nanoparticles. EDS analysis confirms the composition of deposited thin film on glass substrate. UV-visible absorption spectra show that the bandgap of SnO2 thin film is 3.54 eV. Bandgap of SnO2 thin film can be tuned that it can be used in optical devices.
Highlights
The tin oxide is a wide bandgap semiconductor, and it has only the tin atom that occupies the centre of a surrounding core composed of six oxygen atoms placed approximately at the corners of a quasiregular octahedron (Figure 1)
The deposited thin films were characterized by Xray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectra, and energy dispersivespectroscopy (EDS) measurements
XRD pattern is compared with JCPDS standard database [13], which confirms the formation of SnO2
Summary
The tin oxide is a wide bandgap semiconductor (energy bandgap 3.6 eV), and it has only the tin atom that occupies the centre of a surrounding core composed of six oxygen atoms placed approximately at the corners of a quasiregular octahedron (Figure 1). SnO2 is a special oxide material because it has a low electrical resistance with high optical transparency in the visible range. It has been shown that the formation energy of oxygen vacancies and tin interstitials in SnO2 is very low. These defects form readily, which explains the high conductivity of pure, but nonstoichiometric, tin oxide. Spray parameters Nozzle Nozzle-substrate distance SnCl4·5H2O solution concentration Solvent Solution flow rate Carrier gas Substrate temperature. The deposited material [10] Keeping these in view, we have used an aqueous solution of SnCl4·5H2O as the precursor solution for spray pyrolysis in the present investigation. We report the synthesis and characterization of nanostructured tin oxide thin films
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