Spontaneous and stimulated emission from photopumped GaN grown on SiC

Abstract

Photoluminescence of GaN layers grown on 6H–SiC substrates was studied in the temperature range 77–900 K. GaN layers were grown by metalorganic chemical vapor deposition. The temperature dependence of the band gap of GaN was measured throughout the entire temperature range. Edge cavity stimulated emission from photopumped GaN layers was observed in the temperature range 77–450 K. The full width at half-maximum (FWHM) of the stimulated emission peak was ∼3 nm at 300 K and ∼7 nm at 450 K. Multipass stimulated emission with Fabry–Pérot modes was detected from GaN. The FWHM of Fabry–Pérot modes was ∼0.2 nm (300 K).