Dislocation Reduction of GaN Layer with a SiN Mask by Using Metalorganic Chemical Vapor Deposition

Abstract

GaN layers with an in-situ SiN mask were grown by using metalorganic chemical vapor deposition (MOCVD) and the physical properties of the GaN layer were studied. Also, the influence of a SiN mask on the optical property of GaN layer was investigated. By inserting a SiN mask, the (102) full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec, and the threading dislocation (TD) density decreased from 3.21 × 10 cm−2 to 9.7 × 10 cm−2. The photoluminescence (PL) peak intensity of sample with a SiN mask increased by 2 times compared to that of sample without a SiN mask. We have shown that a SiN mask significantly improved the physical and the optical properties of the GaN layer.