Spin transport in p-Ge through a vertically stacked Ge/Fe3Si junction

Abstract

We experimentally show spin transport up to 125 K in a ∼40-nm-thick p-Ge(111) layer, epitaxially grown on a ferromagnetic Fe3Si. From the magnitude of the spin signals, the spin diffusion length of the p-Ge(111) layer at 10 K can be estimated to be approximately 50 nm. To understand the detectable spin transport in the p-Ge(111), we should consider the energy splitting between heavy-hole and light-hole bands at the L point.