Abstract
We present experimental and numerical results of current-driven magnetizationswitching in magnetic tunnel junctions. The experiments show that, forMgO-based magnetic tunnelling junctions, the tunnelling magnetoresistance ratiois as large as 155% and the intrinsic switching current density is as low as1.1 × 106 A cm−2. The thermal effect and current pulse width on spin-transfer magnetization switchingare explored based on the analytical and numerical calculations. Three distinctswitching modes, thermal activation, dynamic reversal, and precessional process,are identified within the experimental parameter space. The switching currentdistribution, write error, and read disturb are discussed based on device designconsiderations. The challenges and requirements for the successful application ofspin-transfer torque as the write scheme in random access memory are addressed.
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