Abstract
Memory cells based on electric charge storage, such as flash memory, are rapidly approaching the physical limits of scalability. The spin transfer torque random access memory (STTRAM) is one of the promising candidates for future universal memory [1-6]. The reduction of the current density required for switching and the increase of the switching speed are among the most important challenges in this area. Measurements performed in [4] showed a decrease in the critical current density for the penta-layer magnetic tunnel junction (MTJ) compared with the tri-layer MTJ. To achieve symmetric switching in asymmetric MTJs an external in-plane compensating magnetic field has to be introduced [4]. By numerically investigating the dynamics of the switching process in a MTJ composed of five layers we present the methodology on how to achieve symmetric switching without an external magnetic field by properly engineering the nanopillar geometry. 2. Model Description Our micromagnetic simulations are based on the magnetization dynamics described by the Landau-Lifschitz-Gilbert equation:
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