Abstract
We study electron spin transmission mechanism across an Fe3O4/GaAs quantum well interface from complementary optical approaches, i.e., optical polarization analysis of electroluminescence and spin dependent photocurrent measurement under optical spin orientation. A spin polarization over 40% is demonstrated at 10 K, as estimated from the electroluminescence due to free exciton recombination in the quantum well under spin injection conditions. The bias dependence of spin dependent photocurrent, on the other hand, shows two marked peaks due to spin filtering effect of Fe3O4, providing information on the spin-split barrier structure of the magnetic insulator Fe3O4. These combined results clearly elucidate the mechanism of the high efficiency of spin injection across Fe3O4.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
