Spin Injection Processes in ZnSe-Based Double Quantum Dots of Diluted Magnetic Semiconductors

Abstract

Spin injection processes in the double quantum dots of ZnSe-based diluted magnetic semiconductors are discussed. Double quantum dots are fabricated from ZnSe-based double quantum wells by electron beam lithography and wet etching. In these samples, the photo-excited carriers in the magnetic dots are injected into the non-magnetic dots. The circular polarization degrees of photoluminescence from the non-magnetic dots are measured by micro-photoluminescence measurement system under the magnetic field up to 5 T. The maximum spin polarization degrees of injected carriers determined from our experiment are 10% for double quantum wells and 15% for double quantum dots. The spin injection efficiency was estimated both from the observed circular polarization degree and the diffusion length of carriers. We concluded that the spin injection efficiency is increased in the double quantum dots.