Abstract
AbstractThis paper deals with the problem of calculations of the dc characteristics of power bipolar transistors (BJTs) with self‐heating taken into account. The electrothermal model of the considered devices dedicated for PSPICE is presented. The correctness of the model was verified experimentally in all ranges of the BJT operation. Two transistors—BD285 and 2N3055—were arbitrarily selected for investigation. A good agreement between the measured and calculated characteristics of these transistors was observed. Copyright © 2009 John Wiley & Sons, Ltd.
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