Abstract
The Letter reports the first study of the temperature dependence of the DC characteristics of InP-based double heterostructure bipolar transistors which have a quaternary collector. The quaternary layer was spaced away from the base-collector junction to improve the HBT characteristics. The devices exhibited useful gain over seven orders of magnitude of current and had breakdown voltages of 8 V. The DC gain decreased with decreasing temperature whereas the ideality factors increased.
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