Abstract
The authors report that the degradation of device characteristics due to electrical stressing in non-passivated fully self-aligned InP-based heterostructure bipolar transistors (HBTs) can be reversed by a simple surface treatment in ozone. The technique is demonstrated on MOCVD-grown InP/GaAs0.51Sb0.49/InP double heterostructure bipolar transistors (DHBTs) with a C-doped base, and on conventional MBE-grown InP/Ga0.47In0.53As single heterostructure bipolar transistors (SHBTs) with a Be-doped base. This is the first report of the reversibility of bias stress damage in the extrinsic region of III-V HBTs: the experiments presented confirm that stress damage occurs at the exposed emitter periphery, thus explaining the success of emitter ledge passivation techniques.
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