Abstract
The emitter regions of Silicon bipolar microwave transistors are usually heavily doped. The magnitude and distribution of impurity concentrations of the emitter and base regions depend upon the designs and technologies of the transistors. Both the bandgap narrowing and the impurity deionization have influence on majority carrier concentrations, minority carrier concentrations and the characteristics of transistors. Considering only one of them may lead to somewhat unsatisfactory results. In this paper an analytical treatment of ideal emitter injection-efficiency-limited current gain of a bipolar device is presented that includes the effects of bandgap narrowing, impurity deionization and Fermi-Dirac statistics. The results predicted by the present analysis are compared with those from other sources, and we can hereby draw some useful conclusions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.