Abstract
In this paper, a Hewlett-Packard (HP) memristor model with a new window function and its versatile characteristics are presented. SPICE behaviors of the linear and nonlinear memristor model are studied through PSpice simulation. High flexibility is demonstrated for emulating the behaviors of the practical HP memristors. Furthermore, the characteristics of the composite SPICE behaviors are both investigated when two memristors are connected in series and in parallel. The polarity of each memristor is also taken into consideration. The relationships among flux, charge, voltage, current, and memristance of the double memristor circuits are simulated and analyzed.
Highlights
There are three fundamental two-terminal passive circuit elements, i.e., resistors R, capacitors C and inductors L, which can be found and introduced from any basic circuit books
No great progress was developed in the research field of memristor until the group of Williams at Hewlett-Packard (HP) lab successfully fabricated the first nanoscale memristive device based on titanium dioxide thin film in 2008 [2]
The SPICE behaviors of the linear and nonlinear memristor model are investigated through PSpice simulation
Summary
There are three fundamental two-terminal passive circuit elements, i.e., resistors R, capacitors C and inductors L, which can be found and introduced from any basic circuit books. Chua first theoretically postulated the existence of the fourth passive electrical circuit element in 1971 [1], named as memristor, whose memristance (i.e., an acronym for memory resistance) M can be defined by the relation of magnetic flux φ and electrical charge q, namely, M dφ/dq. 17, a switching window function was proposed, where the current i is involved, but it has limited scalability. Two different window functions were presented to mimic nonlinear effects in refs. To illustrate the significance of the proposed window function, main characteristics of state-of-the-art ones in recent years are listed in Table 1 for comparisons. The SPICE behaviors of the linear and nonlinear memristor model are investigated through PSpice simulation. The relationships among flux, charge, voltage, current, and memristance are simulated and analyzed using PSpice
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