An adjustable memristor model and its application in small-world neural networks

Abstract

This paper presents a novel mathematical model for the TiO2 thin-film memristor device discovered by Hewlett- Packard (HP) labs. Our proposed model considers the boundary conditions and the nonlinear ionic drift effects by using a piecewise linear window function. Four adjustable parameters associated with the window function enable the model to capture complex dynamics of a physical HP memristor. Furthermore, we realize synaptic connections by utilizing the proposed memristor model and provide an implementation scheme for a small-world multilayer neural network. Simulation results are presented to validate the mathematical model and the performance of the neural network in nonlinear function approximation.