Abstract
The main idea of the present research is to propose a new memristor model with a highly nonlinear ionic drift suitable for computer simulations of titanium dioxide memristors for a large region of memristor voltages. For this purpose, a combination of the original Biolek window function and a weighted sinusoidal window function is applied. The new memristor model is based both on the Generalized Boundary Condition Memristor (GBCM) Model and on the Biolek model, but it has an improved property—an increased extent of nonlinearity of the ionic drift due to the additional weighted sinusoidal window function. The modified memristor model proposed here is compared with the Pickett memristor model, which is used here as a reference model. After that, the modified Biolek model is adjusted so that its basic relationships are made almost identical with these of the Pickett model. After several simulations of our new model, it is established that its behavior is similar to the realistic Pickett model but it operates without convergence problems and due to this, it is also appropriate for computer simulations. The modified memristor model proposed here is also compared with the Joglekar memristor model and several advantages of the new model are established.
Highlights
After several simulations of our new model, it is established that its behavior is similar to the realistic Pickett model but it operates without convergence problems and due to this, it is appropriate for computer simulations
The modified memristor model based both on Biolek model and Generalized Boundary Condition Memristor (GBCM) model is a general one and it contains a modified window function, which is a
The modified memristor model based both on Biolek model and GBCM model is a general one and it contains a modified window function, which is a sum of the original Biolek window function, and a weighted sinusoidal window function
Summary
Each of the basic memristor models—the linear drift model proposed by Strukov and Williams [2] and the nonlinear drift models made by Joglekar [3], Pickett [4,5], and Biolek [6]—is appropriate for specific electrical modes for the operation of the memristor elements. The new ideas of the memristor model proposed here are that the weight coefficient in front of the additional sinusoidal window function component and the respective extent of nonlinearity of the memristor dopant drift could be changed and adjusted till the basic relationship of the memristor are almost near to these obtained by the Pickett model for the same conditions.
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