Abstract
Quantum-well (QW) structures comprised of nominally 1, 2 and 3 monolayers of either GaAs of GaInAs, embedded in InP have been grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Such QW structures are known to be strongly affected by interface layers due to As replacing P on the bottom interface and due to As carry-over from the QW into the top InP barrier. Theoretically one expects GaInAs/InP to form a type I QW while a “clean” GaAs layer embedded in InP is assumed to be of type II. However, the inclusion of the InAs-like interface layers has a strong effect on the type-I vs type-II conditions. Based on a systematic study of growth and interface interrupt conditions we have been able to find conditions which yield the best QW interfaces, as judged from photoluminescence (PL) combined with modeling of the electronic structures. PL peak half widths of 7–10 meV are obtained. First, conditions are described for the formation of such very thin, high quality QWs. We then report good qualitative agreement between the spectroscopic data and the results of the modeling of the QWs, which includes contributions from the growth-dependent interface layers.
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