Abstract
AbstractThis work presents essential differences in the fill factors (FF) of pin and nip solar cell structures based on hydrogenated amorphous silicon (a-Si:H). The nomenclature “pin’ (‘nip’ respectively) determines the deposition sequence of the single layers. Fill factor measurements are carried out with illumination through p- and n-layers at different wavelengths. The use of laser light provides a wide range of illumination levels and photo current densities of up to 14mA/cm2. The spectrally resolved FF measurements indicate an incorporation of dopants in the i-layer depending on the layer deposited first. Nip and pin structures generally show opposite FF dispersion when illuminated through the same layer. However, due to the slight n-conductivity of intrinsic a-Si:H material, a weak boron incorporation leads to a net charge compensation in the ilayer. In contrast to other investigations we do not find a significant deviation in the open circuit voltages of the pin and nip devices as long as the deposition parameters of the single layers are identical.
Published Version
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