Abstract
Mircocrystalline silicon solar cells based on pin and nip layer sequences require an effective light trapping in the near infrared (NIR) to enhance the long wavelength spectral response. Therefore, the effect of interface roughness on the optical properties of microcrystalline pin and nip solar cells was investigated. Based on a detailed analysis of scattering properties of textured substrates the device performance of the realized solar cells deposited by plasma enhanced chemical vapor depositon is discussed. The roughness of the substrates is controlled by a chemical etching step of the ZnO layer, which yields to a root mean square roughness drms between 10 and 150 nm. The pin diodes deposited on substrates with a roughness exceeding 40 nm show a similar red response although the haze and the angle resolved scattering properties of the substrate differ significantly. It is also found that light trapping in nip structures is less effective than in pin structures.
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