Abstract

We report the spectral characteristics of AlGaAs–GaAs multiple-quantum-wire (QWR) lasers fabricated by flow rate modulation epitaxy on V-grooved substrates. Room-temperature lasing from the fundamental state (1e-1hh) is generally observed in devices longer than 350 µm; however, secondary peaks at the adjacent higher subbands are immediately detected following current injection. The evolution of the stimulated emission spectra is investigated here. Typical threshold current and the wavelength tuning rate of current are observed to be 6.2 mA and 0.012 nm/mA, respectively, for 800-µm-long uncoated cavities.

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