Abstract
A growth condition (growth temperature) which could maintain an identical growth profile of AlGaAs grown on a V-grooved substrate by metalorganic vapor phase epitaxy independent of the growth thickness is established. This condition is applied to the fabrication of highly uniform AlGaAs GaAs quantum wire superlattices (QWR-SLs) by vertical stacking of multiple QWRs on a V-grooved substrate. An AlGaAs barrier layer thickness of about twice that of the GaAs QWR layer is found to be necessary for the complete recovery of the distorted V-groove bottom curvature. A series of 20 period AlGaAs GaAs QWR-SLs are successfully grown by flow rate modulation epitaxy under the developed condition for a stable AlGaAs growth profile. The excellent size uniformity of the vertically stacked QWRs is confirmed by transmission electron microscopy observation and the narrow full width at half maximum of an AlGaAs(135 A ̊ ) GaAs(45) A ̊ QWR-SL photoluminescence peak.
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