Abstract
It is shown that a simple ratio technique based on the electron channeling phenomenon can be used to measure substitutional fractions of dopants in submicron-sized regions of semiconductors. Samples were made from 121Sb+ implanted Si, solid-phase-epitaxially regrown, and analyzed by ion channeling. One sample was sequentially annealed so as to precipitate out various fractions of the dopant in excess of the solubility limit. In the fully annealed sample electron channeling measurements could quantitatively determine the fraction of Sb in precipitate form since it was randomly located with respect to the matrix. In the partially annealed sample electron channeling indicated a larger nonsubstitutional fraction than could be accounted for by observed precipitates.
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