Spacer-gate engineered workfunction dependence of subthreshold characteristic for dopingless tunnel filed effect transistor

Abstract

In this paper, an optimally designed double metal gate dopingless tunnel field effect transistor (DMG-DLTFETs) with high dielectric material spacer is investigated using Sentaurus 2D-TCAD tools. Using Charge plasma concept, with appropriate workfunction of metal electrode source and drain are formed so, we also not require impurity doping in the channel section of proposed device. The proposed device structure is exempted greatly to the process variation, issues of controlling over doping and random dopant fluctuations (RDF). For further improvement in SS, RF performance and ON current double metal on single gate with different-2 workfunction are used. In the proposed device Hafnium oxide (HfO 2 ) of length 15nm each are used on both side of drain and source. Therefore, the proposed device offers high I ON /O OFF ratio of 1011, smaller point SS of 41 mV/decade and average SS of 54 mV/decade etc. We have also done a comparison study between proposed device and DMG-DLTFET without spacer.