Abstract
Structure of thin oxide films on the (001) surface of single crystals of Fe-Si alloys in the concentration range of 2.5–12.0wt.% Si after oxidation at 400 °C and an O 2 partial pressure 30 torr has been studied by reflection high-energy electron diffraction. The films are composed of Fe oxides and there is no evidence of the presence of any silicate compounds in films grown at 400 °C. The epitaxy of oxide films is affected particularly by Si concentration in the alloy substrate and by the final stage of surface preparation. Heating in H 2 prior to oxidation affects the epitaxy of oxide films very unfavourably, whereas if the samples are brought to temperature in A, highly oriented films grow in the initial period of oxidation on alloys containing up to 6.4wt.% Si. For highly oriented films, the orientational relationships between the individual oxide phases and the substrate are analogous to those having been reported for highly oriented oxide films on pure Fe.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
